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参数资料
| 型号： | S1227-16BQ |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 2/4页 |
| 文件大小： | 145K |
| 代理商： | S1227-16BQ |
Si photodiode
S1227 series
0.1
0
PHOTO
SENSITIVITY
(A/W)
190
400
600
800
1000
WAVELENGTH (nm)
0.3
0.2
(Typ. Ta=25 C)
0.4
0.5
0.6
0.7
S1227-BR
S1227-BQ
S1227-BR
s Spectral response
s Photo sensitivity temperature characteristic
KSPDB0094EA
TEMPERATURE
COEFFICIENT
(%/
C)
WAVELENGTH (nm)
(Typ. )
0
190
400
600
800
1000
+1.0
+0.5
+1.5
-0.5
KSPDB0030EB
RISE
TIME
LOAD RESISTANCE (
)
(Typ. Ta
=25 C, VR=0 V)
102
10 ns
103
104
105
S1227-16BQ/BR, -33BQ/BR
S1227-1010BQ/BR
S1227-66BQ/BR
100 ns
1
s
10
s
100
s
1 ms
KSPDB0095EA
DARK
CURRENT
REVERSE VOLTAGE (V)
(Typ. Ta
=25 C)
0.01
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
S1227-66BQ/BR
S1227-16BQ/BR
S1227-33BQ/BR
S1227-1010BQ/BR
KSPDB0096EB
SHUNT
RESISTANCE
AMBIENT TEMPERATURE (C)
(Typ. VR
=10 mV)
-20
0
204060
80
10 k
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
S1227-33BQ/BR
S1227-16BQ/BR
S1227-66BQ/BR
S1227-1010BQ/BR
s Shunt resistance vs. ambient temperature
KSPDB0097EA
s Rise time vs. load resistance
s Dark current vs. reverse voltage
2
相关PDF资料 |
PDF描述 |
|---|---|
| S1227-33BQ | PHOTO DIODE |
| S1227-1010BQ | PHOTO DIODE |
| S1227-66BR | PHOTO DIODE |
| S1336-18BU | PHOTO DIODE |
| S153P | PIN PHOTO DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S1227-16BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-66BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-66BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
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