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参数资料
| 型号： | S186P |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 2/6页 |
| 文件大小： | 73K |
| 代理商： | S186P |
www.vishay.com
2
Document Number 81536
Rev. 1.5, 27-Nov-06
S186P
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Open Circuit Voltage
Ee = 1 mW/cm
2,
λ = 950 nm
Vo
350
mV
Short Circuit Current
Ee = 1 mW/cm
2,
λ = 950 nm
Ik
38
A
Reverse Light Current
Ee = 1 mW/cm
2,
λ = 950 nm,
VR = 5 V
Ira
43
45
A
Angle of Half Sensitivity
± 65
deg
Wavelength of Peak Sensitivity
λ
p
950
nm
Range of Spectral Bandwidth
λ
0.5
870 to 1050
nm
Noise Equivalent Power
VR = 20 V, λ = 950 nm
NEP
4 x 10-14
W/
√ Hz
Rise Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
20
40
60
80
1
10
100
1000
100
94 8403
V
R = 10 V
T
amb - Ambient Temperature (°C)
I ro
-
Re
v
erse
Dark
C
u
rrent
(nA)
0.6
0.8
1.0
1.2
1.4
94 8409
VR =5 V
λ = 950 nm
100
80
60
40
20
0
I
-
Relati
v
e
Re
v
erse
Light
C
u
rrent
T
- Ambient Temperature (°C)
amb
ra
rel
Figure 3. Reverse Light Current vs. Irradiance
Figure 4. Reverse Light Current vs. Reverse Voltage
0.01
0.1
1
0.1
1
10
100
1000
I
-Re
v
erse
Light
C
u
rrent
(
A)
ra
Ee - Irradiance (mW/cm)
10
94 8414
VR = 5 V
= 950 nm
λ
0.1
1
10
1
10
100
VR - Reverse Voltage (V)
100
94 8415
I
-Re
v
erse
Light
C
u
rrent
(
A)
ra
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
= 950 nm
λ
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