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参数资料
| 型号： | S186P |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/6页 |
| 文件大小： | 73K |
| 代理商： | S186P |
S186P
Document Number 81536
Rev. 1.5, 27-Nov-06
Vishay Semiconductors
www.vishay.com
3
Figure 5. Diode Capacitance vs. Reverse Voltage
Figure 6. Relative Spectral Sensitivity vs. Wavelength
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
0
20
40
60
80
948407
E=0
f = 1 MHz
C
D
-
Diode
Capacitance
(pF)
V
R - Reverse Voltage (V)
0.1
100
110
750
850
950
1050
0
0.2
0.4
0.6
0.8
1.2
S
(
)
-
Relati
v
e
Spectral
Sensiti
v
ity
rel
- Wavelength (nm)
1150
94 8408
1.0
0.4
0.2
0
0.2
0.4
S
-
Relati
v
e
Sensiti
v
ity
rel
0.6
94 8406
0.6
0.9
0.8
0°
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
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