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参数资料
| 型号： | S1D-HE3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 344K |
| 代理商： | S1D-HE3 |
S1A thru S1M
Document Number 88711
06-Sep-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Surface Mount Glass Passivated Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
40 A, 30 A
IR
1.0 A, 5.0 A
VF
1.1 V
Tj max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (see fig.1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| S1J-7-F | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S1MB-7-F | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| S1M | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| S1D | 1 A, 200 V, SILICON, SIGNAL DIODE |
| S1B | 1 A, 100 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S1DHE3/2GT | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1DHE3/5AT | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1DHE3/61T | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1DHE3/63T | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1DHE3_A/H | 制造商:Vishay Semiconductors 功能描述: |
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