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参数资料
| 型号： | S1B |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 70K |
| 代理商： | S1B |
S1A thru S1M
FEATURES
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
All Dimensions in millimeter
SMA
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
2.92
2.29
1.27
1.63
0.31
0.15
4.83
5.59
0.05
0.20
1.96
2.40
0.76
1.52
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Lead and Case.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 ℃
@TJ =25 ℃
Typical Junction Capacitance (Note1)
1.0
30
1.1
5.0
100
10
Typical Thermal Resistance (Note 2)
/W
℃
pF
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
@TL = 100℃
@TC = 100℃
200
140
200
50
35
50
1000
700
1000
100
70
100
800
560
800
600
420
600
400
280
400
S1A
S1M
S1K
S1J
S1G
S1D
S1B
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
SURFACE MOUNT
GLASS PASSIVATED RECTIFIERS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
SEMICONDUCTOR
LITE-ON
REV. 9, Jan-2011, KSDA01
30
TJ
Operating Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +150
℃
B
A
C
H
E
F
G
D
SMA
R0JL
R0JC
相关PDF资料 |
PDF描述 |
|---|---|
| S1A | 1 A, 50 V, SILICON, SIGNAL DIODE |
| S1K | 1 A, 800 V, SILICON, SIGNAL DIODE |
| S1X | 1 A, 1800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1Y | 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AC |
| S2305 | 300 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S-1B | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述:30V 50000(@BIv) / 25000(dCIv) bL +85 -30 Bulk |
| S1-B | 制造商:Multi-Contact 功能描述: |
| S1B R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R |
| S1B | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1.0A 100V |
| S1B/11T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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