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参数资料
| 型号： | S1B |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 70K |
| 代理商： | S1B |
RATING AND CHARACTERISTIC CURVES
S1A thru S1M
FIG.1 - FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
A
M
P
E
R
E
S
25
75
100
125
150
0.8
0
50
0.4
175
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
1.0
0.6
0.2
LEAD TEMPERATURE , C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
1
5
10
50
100
2
20
0
10
20
30
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
0.2
0.4
1.2
1.4
0
0.1
1.0
10
0.6
0.8
1.0
.01
1.8
1.6
TJ = 25 C
PULSEWIDTH:300us
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(u
A
)
20
40
120
140
0
0.1
1.0
10
1000
100
60
80
100
0.01
TJ = 25 C
TJ = 125 C
相关PDF资料 |
PDF描述 |
|---|---|
| S1A | 1 A, 50 V, SILICON, SIGNAL DIODE |
| S1K | 1 A, 800 V, SILICON, SIGNAL DIODE |
| S1X | 1 A, 1800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1Y | 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AC |
| S2305 | 300 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S-1B | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述:30V 50000(@BIv) / 25000(dCIv) bL +85 -30 Bulk |
| S1-B | 制造商:Multi-Contact 功能描述: |
| S1B R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R |
| S1B | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1.0A 100V |
| S1B/11T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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