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参数资料
| 型号： | S1D |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 46K |
| 代理商： | S1D |
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (see fig.1)
IF(AV)
1.0
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
40
30
A
superimposed on rated load (JEDEC Method) TL=110°C
Typical thermal resistance (NOTE 1)
R
ΘJA
75
85
R
ΘJL
27
30
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Maximum instantaneous forward voltage at 1.0A
VF
1.10
V
Maximum DC reverse current
TA =25°C
1.0
5.0
at Rated DC blocking voltage
TA=125°C
IR
50
A
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
1.8
s
Typical junction capacitance at 4.0V, 1MHz
CJ
12
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/4/00
Dimensions in inches
and (millimeters)
S1A thru S1M
Surface Mount Glass Passivated Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.0A
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief, ideal for automated placement
Glass passivated chip junction
High temperature soldering:
250°C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-214AC molded plastic over
glass passivated chip
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 ounce, 0.064 gram
DO-214AC (SMA)
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
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PDF描述 |
|---|---|
| S1K-LTP | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1J-LTP | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1A-LTP | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1NB20-4101 | 1 A, SILICON, BRIDGE RECTIFIER DIODE |
| S1NB80 | 1 A, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S1D F2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述: 制造商:Taiwan Semiconductor 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R |
| S1D MCC | 制造商:Micro Commercial Components (MCC) 功能描述:General Purpose 200V SMD (Surface Mount) Rectifier SMA 1A - free partial T/R at 500. |
| S1D R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R |
| S1D(GS) | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1.0A 200V |
| S1D/1 | 功能描述:DIODE 1A 200V SMA RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
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