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参数资料
| 型号： | S1PB-M3/84A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封装： | HOLOGEN FREE AND ROHS COMPLIANT, GLASS, SMP, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 84K |
| 代理商： | S1PB-M3/84A |
Document Number: 88917
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Glass Passivated Rectifiers
S1PB thru S1PM
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
General
purpose,
polarity
protection,
and
rail-to-rail
protection in both consumer and automotive applications.
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low thermal resistance
Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V to 1000 V
IR
1 μA
VF
0.95 V
TJ max.
150 °C
DO-220AA (SMP)
eSMP
Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1PB
S1PD
S1PG
S1PJ
S1PK
S1PM
UNIT
Device marking code
SB
SD
SG
SJ
SK
SM
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
100
200
400
600
800
1000
V
Average forward current
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| S1PGHM3/84A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PBHM3/85A | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PK-M3/85A | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PKHM3/85A | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PG-M3/84A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S1PC_GAST WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| S1PD | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Glass-Passivated Rectifiers |
| S1PDB122 | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:Single Phase Bridge Rectifiers Modules |
| S1PDB122N08 | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:Single Phase Bridge Rectifiers Modules |
| S1PDB122N10 | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:Single Phase Bridge Rectifiers Modules |
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