参数资料
型号: S1PB-M3/84A
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA
封装: HOLOGEN FREE AND ROHS COMPLIANT, GLASS, SMP, 2 PIN
文件页数: 3/5页
文件大小: 84K
代理商: S1PB-M3/84A
Document Number: 88917
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1PB thru S1PM
Vishay General Semiconductor
New Product
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
Peak
Forward
S
urge
Current
(A)
Number of Cycles at 50 Hz
1
10
100
10
20
30
0
5
15
25
0.4
0.6
0.8
1.2
1.4
Instantaneous Forward Voltage (V)
0.1
10
1
100
In
s
tantaneou
s
Forward
Current
(A)
0.01
1.8
2.0
1.0
1.6
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e
Curr
e
nt
(μA)
20
40
60
80
100
0.1
1
10
100
10
30
50
70
90
0.01
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Reverse Voltage (V)
Junction
Capacitance
(pF)
0.1
10
1
100
1
10
100
0.01
10
1
100
1
10
100
0.1
1000
t - Pulse Duration (s)
T
ran
s
ient
Thermal
Impedance
(°C/W)
相关PDF资料
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S1PGHM3/84A 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA
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