参数资料
型号: S1PD-E3/85A
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA
封装: ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件页数: 1/5页
文件大小: 104K
代理商: S1PD-E3/85A
New Product
S1PB thru S1PM
Vishay General Semiconductor
Document Number: 88917
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Glass-Passivated Rectifiers
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection
in
both
consumer
and
automotive
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1 A
VRRM
100 V to 1000 V
IR
1 A
VF
0.95 V
TJ max.
150 °C
DO-220AA (SMP)
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1PB
S1PD
S1PG
S1PJ
S1PK
S1PM
UNIT
Device marking code
SB
SD
SG
SJ
SK
SM
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
100
200
400
600
800
1000
V
Average forward current
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料
PDF描述
SMV1212-074LF 50 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SMV1215-001LF 9.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SMAJ180C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SST505 1 mA, SILICON, CURRENT REGULATOR DIODE, TO-236AB
SAC6.0/51-E3 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
相关代理商/技术参数
参数描述
S1PDHE3/84A 功能描述:整流器 200 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
S1PDHE3/85A 功能描述:整流器 200 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
S1PDHM3/84A 功能描述:整流器 200volt 1.0amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
S1PDHM3/85A 功能描述:整流器 200volt 1.0amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
S1PD-M3/84A 功能描述:二极管 - 通用,功率,开关 200volt 1.0amp RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube