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参数资料
| 型号： | S1PD-E3/85A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 104K |
| 代理商： | S1PD-E3/85A |
New Product
S1PB thru S1PM
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88917
Revision: 26-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJC is measured
at the terminal of cathode band. RθJC is measured at the top centre of the body
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1PB
S1PD
S1PG
S1PJ
S1PK
S1PM
UNIT
Maximum instantaneous
forward voltage (1)
IF = 1.0 A
TJ = 25 °C
TJ = 125 °C
VF
1.1
0.95
V
Maximum reverse current (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
1.0
50
1.0
100
A
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.8
s
Typical junction capacitance time
4.0 V, 1 MHz
CJ
6.0
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1PB
S1PD
S1PG
S1PJ
S1PK
S1PM
UNIT
Typical thermal resistance (1)
RθJA
RθJL
RθJC
105
15
20
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1PJ-E3/84A
0.024
84A
3000
7" diameter plastic tape and reel
S1PJ-E3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
S1PJHE3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
S1PJHE3/85A (1)
0.024
85A
10 000
13" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
0
1.2
80
90
100
110
120
130
140
150
A
v
erage
For
w
ard
Rectified
C
u
rrent
(A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
T
L Measured
at the Cathode Band Terminal
Figure 2. Forward Power Loss Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current
A
v
er
age
P
o
w
er
Loss
(
W
)
D = t
p/T
t
p
T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S1PDHE3/84A | 功能描述:整流器 200 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PDHE3/85A | 功能描述:整流器 200 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PDHM3/84A | 功能描述:整流器 200volt 1.0amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PDHM3/85A | 功能描述:整流器 200volt 1.0amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PD-M3/84A | 功能描述:二极管 - 通用，功率，开关 200volt 1.0amp RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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