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参数资料
| 型号： | S2387-1010R |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 2/4页 |
| 文件大小： | 117K |
| 代理商： | S2387-1010R |
Si photodiode
S2387 series
AMBIENT TEMPERATURE (C)
SHUNT
RESISTANCE
(Typ. VR=10 mV)
100 k
1 M
10 M
100 M
1 G
10 T
-20
0
20
40
60
S2387-16R/33R
S2387-130R
S2387-1010R
80
10 G
100 G
1 T
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
(Typ. Ta=25 C)
s Spectral response
s Photo sensitivity temperature characteristic
KSPDB0115EA
KSPDB0058EB
KSPDB0116EA
KSPDB0117EA
-0.5
0
+0.5
+1.0
+1.5
200
400
600
800
1000
WAVELENGTH (nm)
TEMPERATURE
COEFFICIENT
(
%
/
C)
(Typ.)
s Rise time vs. load resistance
s Dark current vs. reverse voltage
s Shunt resistance vs. ambient temperature
KSPDB0118EA
LOAD RESISTANCE (
)
RISE
TIME
(Typ. Ta=25 C, VR=0 V)
10 ns
100 ns
1 s
10 s
100 s
1 ms
102
103
104
105
S2387-16R/33R
S2387-130R
S2387-1010R
REVERSE VOLTAGE (V)
DARK
CURRENT
(Typ. Ta=25 C)
10 fA
100 fA
1 pA
10 pA
100 pA
1 nA
0.01
0.1
1
10
100
S2387-16R/33R
S2387-66R
S2387-1010R
S2387-130R
2
相关PDF资料 |
PDF描述 |
|---|---|
| S2387-16R | PHOTO DIODE |
| S2592-04 | PHOTO DIODE |
| S3477-04 | PHOTO DIODE |
| S3477-03 | PHOTO DIODE |
| S25SC6M-4001 | 12.5 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S2387-130R | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-33R | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-66R | 制造商:Hamamatsu Photonics 功能描述:PHOTODIODE 960NM |
| S238A13 | 制造商:APEM 功能描述: |
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