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参数资料
| 型号： | S2387-1010R |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 3/4页 |
| 文件大小： | 117K |
| 代理商： | S2387-1010R |
Si photodiode
S2387 series
8.5 ± 0.2
2.7
±
0.1
1.5
±
0.1
6.2
ANODE
TERMINAL MARK
13.5 ± 0.13
15 ± 0.15
0.45
ACTIVE AREA
HOLE
(2 ×) 0.8
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
7.6 ± 0.1
6.0
±
0.1
ACTIVE AREA
2.0
±
0.1
10.5
0.75
0.35
6.6 ± 0.3
4.5 ± 0.2
5.0
±
0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
10.1 ± 0.1
8.9
±
0.1
ACTIVE AREA
2.0
±
0.1
10.5
0.75
0.3
9.2 ± 0.3
7.4 ± 0.2
8.0
±
0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
15.0
±
0.15
ACTIVE AREA
2.15
±
0.1
10.5
0.9
0.3
15.1 ± 0.3
12.5 ± 0.2
13.7
±
0.3
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
s
s Dimensional outlines (unit: mm)
S2387-16R
S2387-33R
KSPDA0106EA
KSPDA0108EA
KSPDA0112EA
KSPDA0110EA
S2387-66R
S2387-1010R
3
相关PDF资料 |
PDF描述 |
|---|---|
| S2387-16R | PHOTO DIODE |
| S2592-04 | PHOTO DIODE |
| S3477-04 | PHOTO DIODE |
| S3477-03 | PHOTO DIODE |
| S25SC6M-4001 | 12.5 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S2387-130R | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-33R | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-66R | 制造商:Hamamatsu Photonics 功能描述:PHOTODIODE 960NM |
| S238A13 | 制造商:APEM 功能描述: |
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