- 您现在的位置：买卖IC网 > PDF目录270895 > S29GL032A11BFIR10 (Spansion Inc.) 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY PDF资料下载
参数资料
| 型号： | S29GL032A11BFIR10 |
| 厂商： | Spansion Inc. |
| 英文描述： | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| 中文描述： | 64兆位32MEGABIT 3.0螺栓只页面模式闪存 |
| 文件页数： | 15/88页 |
| 文件大小： | 1425K |
| 代理商： | S29GL032A11BFIR10 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页当前第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页
20
S29GLxxxA MirrorBit Flash Family
S29GLxxxA_00_A2 January 28, 2005
Ad van c e
Inf o rmation
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or
word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ0–DQ15 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only
data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/
O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the
LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE#
pins to VIL. CE# is the power control and selects the device. OE# is the output
control and gates array data to the output pins. WE# should remain at VIH.
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data on the device data
outputs. The device remains enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer to the AC Read-Only Op-
erations table for timing specifications and the timing diagram. Refer to the DC
Characteristics table for the active current specification on reading array data.
Page Mode Read
The device is capable of fast page mode read and is compatible with the page
mode Mask ROM read operation. This mode provides faster read access speed for
random locations within a page. The page size of the device is 4 words/8 bytes.
The appropriate page is selected by the higher address bits A(max)–A2. Address
bits A1–A0 in word mode (A1–A-1 in byte mode) determine the specific word
within a page. This is an asynchronous operation; the microprocessor supplies
the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page
read accesses (as long as the locations specified by the microprocessor falls
within that page) is equivalent to tPACC. When CE# is deasserted and reasserted
for a subsequent access, the access time is tACC or tCE. Fast page mode accesses
are obtained by keeping the “read-page addresses” constant and changing the
“intra-read page” addresses.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word, instead of four. The “Word Program Command
Sequence” section has details on programming data to the device using both
standard and Unlock Bypass command sequences.
相关PDF资料 |
PDF描述 |
|---|---|
| S29AL016M90BFIR10 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M10BFIR10 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M90FFIR10 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M10FFIR10 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29GL256N80TFIV10 | MirrorBit Flash Family |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29GL032A11BFIR11 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11BFIR12 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11BFIR13 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11BFIR20 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11BFIR21 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
发布紧急采购，3分钟左右您将得到回复。