参数资料
型号: S29GL032M10BCIR32
厂商: SPANSION LLC
元件分类: PROM
英文描述: MirrorBit Flash Family
中文描述: 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
封装: LEAD FREE, BGA-48
文件页数: 12/162页
文件大小: 4557K
代理商: S29GL032M10BCIR32
March 30, 2004 S29GLxxxM_00A4
S29GLxxxM MirrorBitTM Flash Family
109
Pre l i m i n a r y
After the Program Resume command is written, the device reverts to program-
ming. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See Write Op-
eration Status for more information.
The system must write the Program Resume command (address bits are don’t
care) to exit the Program Suspend mode and continue the programming opera-
tion. Further writes of the Resume command are ignored. Another Program
Suspend command can be written after the device has resumed programming.
Figure 5. Program Suspend/Program Resume
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 31 and Table 32 show the address and data
requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, or DQ2. Refer to the Write Operation
Status section for information on these status bits.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write Program Suspend
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Write Program Resume
Command Sequence
Read data as
required
Done
reading?
No
Yes
Write address/data
XXXh/3030h
Device reverts to
operation prior to
Program Suspend
Write address/data
XXXh/B0B0h
Wait 15
s
相关PDF资料
PDF描述
S29GL032M10BCIR33 Conductive Polymer Chip Capacitors / T520 Series - High Temperature; Capacitance [nom]: 470uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 40mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-31; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 2.8mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: Low Temperature
S29GL032M10BCIR40 MirrorBit Flash Family
S29GL032M10BCIR42 MirrorBit Flash Family
S29GL032M10BCIR43 MirrorBit Flash Family
S29GL256N10FAI010 MirrorBit Flash Family
相关代理商/技术参数
参数描述
S29GL032M10BCIR33 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BCIR40 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BCIR42 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BCIR43 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BCIR50 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family