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参数资料
| 型号： | S29GL256N10FFI013 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封装： | 13 X 11 MM, LEAD FREE, FBGA-64 |
| 文件页数： | 62/95页 |
| 文件大小： | 3781K |
| 代理商： | S29GL256N10FFI013 |
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May 30, 2008 S29GL-N_00_B8
S29GL-N
65
Data
She e t
Figure 10.1 Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
10.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in
the erase-suspend-read mode. Table 10.1 on page 68 shows the outputs for RY/BY#.
10.3
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 s, then returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
DQ7 = Data?
Yes
No
DQ5 = 1
No
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
START
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相关代理商/技术参数 |
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| S29GL256N10FFI020 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256 |
| S29GL256N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包装:托盘 零件状态:在售 存储器类型:非易失 存储器格式:闪存 技术:FLASH - NOR 存储容量:256Mb （32M x 8，16M x 16） 写周期时间 - 字，页:100ns 访问时间:100ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:56-TFSOP（0.724"，18.40mm 宽） 供应商器件封装:56-TSOP 标准包装:91 |
| S29GL256N11FAI010 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL256N11FAIIH2 | 制造商:Spansion 功能描述:S29GL256N11FAIIH2 - Trays |
| S29GL256N11FFA022 | 制造商:Spansion 功能描述: |
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