参数资料
型号: S29JL032H90TAI223
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封装: MO-142DD, TSOP-48
文件页数: 5/66页
文件大小: 1691K
代理商: S29JL032H90TAI223
March 10, 2005 S29JL032H_00A11
S29JL032H
11
Ad vance
Info rmat i o n
Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch
used to store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to
the internal state machine. The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of
these operations in further detail.
Table 1. S29JL032H Device Bus Operations
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See
3. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, protection on the two out-
ermost boot sectors depends on whether they were last protected or unprotected using the method described in
“Sector/Sector Block Protection and Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
Operation
CE#
OE# WE# RESET# WP#/ACC
Addresses
DQ15–DQ8
DQ7–DQ0
BYTE# =
VIH
BYTE# = VIL
Read
L
H
L/H
AIN
DOUT
DQ14–DQ8 = High-
Z, DQ15 = A-1
DOUT
Write
L
H
L
H
AIN
DIN
Standby
VCC ±
0.3 V
X
VCC ±
0.3 V
L/H
X
High-Z
Output Disable
L
H
L/H
X
High-Z
Reset
X
L
L/H
X
High-Z
Sector Protect
L
H
L
VID
L/H
SA, A6 = L,
A1 = H, A0 = L
X
DIN
Sector Unprotect
L
H
L
VID
SA, A6 = H,
A1 = H, A0 = L
X
DIN
Temporary
Sector Unprotect
X
VID
AIN
DIN
High-Z
DIN
相关PDF资料
PDF描述
S29WS064N0PBAW011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI111 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI112 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI113 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW011 Test Clip; Current Rating:100A; Body Material:Steel; Features:Unmarked; Jaw Opening Max:1.625"; Overall Length:6" RoHS Compliant: NA
相关代理商/技术参数
参数描述
S29JL032H90TAI310 功能描述:闪存 3V 32Mb Float Gate top boot 2Banks 90s RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
S29JL032H90TAI311 制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H90TAI312 制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H90TAI313 功能描述:闪存 3V 32M SIMULTANEOUS READ/WRITE FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
S29JL032H90TAI320 功能描述:闪存 3V 32Mb Float Gate btm boot 2Banks 90s RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel