S29JL032H90TAI223 PDF资料下载(7/66 页)2M X 16 FLASH 3V PROM, 90 ns, PDSO48

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参数资料

March 10, 2005 S29JL032H_00A11

S29JL032H

Ad vance

Info rmat i o n

Accelerated Program Operation

The device offers accelerated program operations through the ACC function. This

is one of two functions provided by the WP#/ACC pin. This function is primarily

intended to allow faster manufacturing throughput at the factory.

If the system asserts VHH on this pin, the device automatically enters the afore-

mentioned Unlock Bypass mode, temporarily unprotects any protected sectors,

and uses the higher voltage on the pin to reduce the time required for program

operations. The system would use a two-cycle program command sequence as

required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin re-

turns the device to normal operation. Note that VHH must not be asserted on

WP#/ACC for operations other than accelerated programming, or device damage

may result. In addition, the WP#/ACC pin must not be left floating or uncon-

nected; inconsistent behavior of the device may result. See “Write Protect

(WP#)” for related information.

Autoselect Functions

If the system writes the autoselect command sequence, the device enters the au-

toselect mode. The system can then read autoselect codes from the internal

read cycle timings apply in this mode. Refer to the Autoselect Mode and Autose-

lect Command Sequence sections for more information.

Simultaneous Read/Write Operations with Zero Latency

This device is capable of reading data from one bank of memory while program-

ming or erasing in the other bank of memory. An erase operation may also be

suspended to read from or program to another location within the same bank (ex-

cept the sector being erased). Figure 20 shows how read and write cycles may be

initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the DC

Characteristics table represent the current specifications for read-while-program

and read-while-erase, respectively.

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相关代理商/技术参数	参数描述
S29JL032H90TAI310	功能描述:闪存 3V 32Mb Float Gate top boot 2Banks 90s RoHS:否制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
S29JL032H90TAI311	制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H90TAI312	制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H90TAI313	功能描述:闪存 3V 32M SIMULTANEOUS READ/WRITE FLASH RoHS:否制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
S29JL032H90TAI320	功能描述:闪存 3V 32Mb Float Gate btm boot 2Banks 90s RoHS:否制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel

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