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参数资料
| 型号： | S2D-E3/52T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 87K |
| 代理商： | S2D-E3/52T |
S2A thru S2M
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88712
Revision: 08-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNIT
Maximum instantaneous
forward voltage
1.5 A
VF
1.15
V
Maximum DC reverse current
at rated DC blocking voltage
TA= 25 °C
TA= 125 °C
IR
1.0
125
A
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Typical junction capacitance
4.0 V, 1 MHz
CJ
16
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNIT
Typical thermal resistance (1)
RθJA
RθJL
53
16
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
REFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S2J-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
S2J-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
S2JHE3/52T (1)
0.096
52T
750
7" diameter plastic tape and reel
S2JHE3/5BT (1)
0.096
5BT
3200
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
Lead Temperature (°C)
A
v
erage
For
w
ard
C
u
rrent
(A)
1.50
50
70
90
110
130
150
0
0.50
1.00
Resistive or Inductive Load
60 Hz Resistive or
Inductive Load
P.C.B. Mounted
0.27 x 0.27" (7.0 x 7.0 mm)
Copper Pad Areas
1.75
0.75
1.25
0.25
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 Hz
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
0
10
30
40
50
1
10
100
20
T
L = 100 °C
8.3 ms Single Half Sine-Wave
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