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参数资料
| 型号： | SM8S26AHE3/2D |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-1 |
| 文件页数： | 1/5页 |
| 文件大小： | 92K |
| 代理商： | SM8S26AHE3/2D |
Document Number: 88387
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 20-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
205
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SM8S10 thru SM8S43A
Vishay General Semiconductor
New Product
FEATURES
Junction passivation optimized design passivated
anisotropic rectifier technology
TJ = 175 °C capability suitable for high reliability
and automotive requirement
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification (varied by test
condition)
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
Note
(1) Non-repetitive current pulse derated above TA = 25 °C
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
PPPM (10 x 1000 μs)
6600 W
PPPM (10 x 10 000 μs)
5200 W
PD
8 W
IFSM
700 A
TJ max.
175 °C
DO-218AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
with 10/1000 μs waveform
PPPM
6600
W
with 10/10 000 μs waveform
5200
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
PD
8.0
W
Peak pulse current with 10/1000 μs waveform
IPPM (1)
See next table
A
Peak forward surge current 8.3 ms single half sine-wave
IFSM
700
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SM8S26-E3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8W 26V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S26HE3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.0W 26V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S26HE3/2E | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.0W 26V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S28 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount PAR Transient Voltage Suppressors |
| SM8S28/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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