- 您现在的位置：买卖IC网 > PDF目录136884 > SM8S26AHE3/2D (VISHAY SEMICONDUCTORS) 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB PDF资料下载
参数资料
| 型号： | SM8S26AHE3/2D |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-1 |
| 文件页数： | 3/5页 |
| 文件大小： | 92K |
| 代理商： | SM8S26AHE3/2D |
Document Number: 88387
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 20-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
207
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10 thru SM8S43A
Vishay General Semiconductor
New Product
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 3 - Pulse Waveform
Fig. 4 - Reverse Power Capability
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
0.90
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SM8S10AHE3/2D (1)
2.605
2D
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
0
2.0
4.0
6.0
8.0
0
50
100
150
200
Power
Di
ss
ipation
(W)
Case Temperature (°C)
0
2000
1000
3000
4000
5000
6000
25
50
75
100
125
150
175
Load
Dump
Power
(W)
Case Temperature (°C)
0
50
100
150
0
10
20
30
40
Input
Peak
Pul
s
e
Current
(%)
t - Time (ms)
t
d
t
r = 10 μs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J = 25 °C
Pulse Width (t
d) is
Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
Rever
s
e
S
urge
Power
(W)
1000
10 000
10
100
Pulse Width (ms) - IPP Exponential Waveform
相关PDF资料 |
PDF描述 |
|---|---|
| SMA5J8.0C-HE3/5A | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMA5J9.0CA-E3/5A | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMAJ100-E3/5A | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMAJ100A-HE3/61 | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMAJ110-E3/5A | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SM8S26-E3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8W 26V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S26HE3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.0W 26V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S26HE3/2E | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.0W 26V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S28 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount PAR Transient Voltage Suppressors |
| SM8S28/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。