- 您现在的位置：买卖IC网 > PDF目录54458 > S2M (LITE-ON SEMICONDUCTOR CORP) 1.5 A, 1000 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | S2M |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 1.5 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 73K |
| 代理商： | S2M |
S2A thru S2M
FEATURES
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
Typical Junction Capacitance (Note 1)
1.5
50
1.15
5.0
125
20
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R0JL
20
C/W
pF
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
@TL =100 C
200
140
200
50
35
50
1000
700
1000
100
70
100
800
560
800
600
420
600
400
280
400
S2A
S2M
S2K
S2J
S2G
S2D
S2B
SMB
All Dimensions in millimeter
SMB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
3.94
3.30
1.96
2.21
0.31
0.15
5.21
5.59
0.05
0.20
2.01
2.50
0.76
1.52
C
B
A
H
E
F
G
D
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.5 Amperes
SURFACE MOUNT
GLASS PASSIVATED RECTIFIERS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
SEMICONDUCTOR
LITE-ON
REV. 4, Oct-2010, KSDB02
相关PDF资料 |
PDF描述 |
|---|---|
| S2M | 1.5 A, 1000 V, SILICON, RECTIFIER DIODE |
| S2B | 1.5 A, 100 V, SILICON, RECTIFIER DIODE |
| S2D | 1.5 A, 200 V, SILICON, RECTIFIER DIODE |
| S2VB20 | 2 A, SILICON, BRIDGE RECTIFIER DIODE |
| S30V60T | 30 A, 600 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S2M R4 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 1KV 2A 2-Pin SMB T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 1KV 2A 2-Pin SMB T/R |
| S2M | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE SMD 2A 1000V |
| S2M/2 | 制造商:Vishay Semiconductors 功能描述:Diode Switching 1KV 1.5A 2-Pin SMB T/R |
| S2M/2BT | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S2M/2CT | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。