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参数资料
| 型号： | S2S |
| 元件分类： | 晶闸管 |
| 英文描述： | 0.8 A, 200 V, SCR |
| 封装： | COMPAK-3 |
| 文件页数： | 2/11页 |
| 文件大小： | 118K |
| 代理商： | S2S |
Sensitive SCRs
Data Sheets
http://www.teccor.com
E5 - 10
2004 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Figure E5.17 Power Dissipation (Typical) versus RMS On-state Current
Figure E5.18 Normalized DC Latching Current versus Case Temperature
Figure E5.19 Simple Test Circuit for Gate Trigger Voltage and
Current Measurement
Note: V1 — 0 V to 10 V dc meter
VGT — 0 V to 1 V dc meter
IG — 0 mA to 1 mA dc milliammeter
R1 — 1 k potentiometer
To measure gate trigger voltage and current, raise gate voltage
(VGT) until meter reading V1 drops from 6 V to 1 V. Gate trigger
voltage is the reading on VGT just prior to V1 dropping. Gate trig-
ger current IGT can be computed from the relationship
where IG is reading (in amperes) on meter just prior to V1 drop-
ping.
Note: IGT may turn out to be a negative quantity (trigger current
flows out from gate lead). If negative current occurs, IGT value is
not a valid reading. Remove 1 k resistor and use IG as the more
correct IGT value. This will occur on 12 A gate products.
02468
10
0
2
4
6
8
10
12
RMS On-state Current [IT(RMS)] – Amps
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
Average
On-state
Power
Dissipation
[P
D(AV)
]–
Watts
6 A to 10 A
TO-220, TO-202,
TO-251, and TO-252
-65
-15
+25
+65
+110 +125
-40
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Case Temperature (TC) – C
Ratio
of
I L
(
T
C
=
25
C)
See General Notes for specific device
operating temperature range.
V1
6 V
DC
+
–
100
D.U.T.
Reset
Normally-closed
Pushbutton
1 k
(1%)
I
G
V
GT
100
I
GT
R1
IN4001
I
GT
I
G
V
GT
1000
------------- Am ps
–
=
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| S2-S | 制造商:TURCK Inc 功能描述:Universal 8-Pin Socket; 2 pole; 2 level; coding ring; Integrated clip |
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