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参数资料
| 型号： | S2S |
| 元件分类： | 晶闸管 |
| 英文描述： | 0.8 A, 200 V, SCR |
| 封装： | COMPAK-3 |
| 文件页数： | 7/11页 |
| 文件大小： | 118K |
| 代理商： | S2S |
Data Sheets
Sensitive SCRs
2004 Teccor Electronics
E5 - 5
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
Electrical Specifications Notes
(1)
See Figure E5.1 through Figure E5.9 for current ratings at
specified operating temperatures.
(2)
See Figure E5.10 for IGT versus TC or TL.
(3)
See Figure E5.11 for instantaneous on-state current (iT) versus on-
state voltage (vT) TYP.
(4)
See Figure E5.12 for VGT versus TC or TL.
(5)
See Figure E5.13 for IH versus TC or TL.
(6)
For more than one full cycle, see Figure E5.14.
(7)
0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 s minimum,
15 s maximum. See Figure E5.20 and Figure E5.21.
(8)
See Figure E5.15 for tgt versus IGT.
(9)
Test conditions as follows:
– TC or TL
≤80 °C, rectangular current waveform
– Rate-of-rise of current
≤10 A/s
– Rate-of-reversal of current
≤5A/s
– ITM = 1 A (50 s pulse), Repetition Rate = 60 pps
– VRRM = Rated
– VR = 15 V minimum, VDRM = Rated
– Rate-of-rise reapplied forward blocking voltage = 5 V/s
– Gate Bias = 0 V, 100
(during turn-off time interval)
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 APK; T106/T107 devices are 4 APK.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) VD = 6 V dc, RL = 100
(See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(14) IGT = 500 A maximum at TC = -40 °C for T106 devices
(15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(16) IH = 6 mA maximum at TC = -40 °C for T106 devices
(17) Pulse Width
≤10 s
(18) IGT = 350 A maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(19) Latching current can be higher than 20 mA for higher IGT types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(20) TC or TL = TJ for test conditions in off state
(21) IDRM and IRRM = 50 A for 2N5064 and 100 A for 2N6565 at
125 °C
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) TC = 110 °C
VGT
IH
IGM
VGRM
PGM
PG(AV)
ITSM
dv/dt
di/dt
tgt
tq
l2t
(4) (12) (22)
Volts
(5) (19)
mAmps
(17)
Amps
Volts
(17)
Watts
(6) (13)
Amps
Volts/Sec
Amps/Sec
(8)
Sec
(9)
Sec
Amps2Sec
TC =
-40 °C
TC =
25 °C
TC =
110 °C
TC = 110 °C
MAX
MIN
60/50 Hz
TYP
MAX
1
0.8
0.25
6
1
6
1
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8
1
6
1
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
6161
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6161
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6161
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8161
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8161
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8161
0.1
100/83
8
100
5
45
41
1
0.8
0.25
6
1
6
1
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8
1
6
1
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
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