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参数资料
| 型号： | S7516 |
| 元件分类： | 光电元器件 |
| 英文描述： | LINEAR OUTPUT PHOTO DETECTOR |
| 封装： | HERMETIC SEALED, TO-8, 5 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 163K |
| 代理商： | S7516 |
Features
l TO-8 style 5-pin package
S7516
: flat glass window
S7516-01: lens window
l Large active area
S7516
:
B3 mm
S7516-01:
B9 mm (lens)
l Wide bandwidth: fc=170 MHz (RL=50 9)
fc=200 MHz (RL=500
9)
Applications
l Spatial light transmission, etc.
PHOTODIODE
Si PIN photodiode with preamp
Wide band detector for spatial light transmission
S7516 series
S7516 series is a Si PIN photodiode incorporating a wide band preamplifier chip, hermetically sealed in a TO-8 package. The photodiode has a
large active area (
B3 mm) yet offers a wide bandwidth, making S7516 series suitable for spatial light transmission. A lens (B9 mm) window type
(S7516-01) is also available.
I Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Power supply (for Op amp)
Vcc
±6
V
Reverse voltage (for photodiode)
VR
50
V
Operating temperature
Topr
-30 to +60
°C
Storage temperature
Tstg
-40 to +80
°C
I Electrical and optical characteristics (Ta=25 °C, Vcc=±5 V, V4=30 V)
S7516
S7516-01
Parameter
Symbol
Condition
Min.
Typ. Max. Min.
Typ. Max.
Unit
Spectral response range
l
-
320 to
1060
--
320 to
1060
-nm
Peak sensitivity wavelength
lp
-
840
-
840
-
nm
l=lp, RL=50 W
-
88-
-
84-
Photo sensitivity
S
l=lp, RL=500 W
-160
-
154
-
V/W
-3 dB, RL=50 W
140
170
-
140
170
-
Cut-off frequency
fc
-3 dB, RL=500 W
160
200
-
160
200
-
MHz
Dark state, f=170 MHz, RL=50 9
-9
-
9
-
Dark state, f=200 MHz, RL=500 9
-
15-
-
15-
nV/Hz1/2
Dark state, f=100 kHz~170 MHz, RL=50 9
-130
-
130
-
Output noise voltage
Vn
Dark state, f=100 kHz~200 MHz, RL=500 9
-240
-
240
-
Vrms
f=170 MHz, RL=50 W
-
0.16
-
0.16
-
Noise equivalent power
NEP
f=200 MHz, RL=500 W
-
0.13
-
0.13
-
nWrms/Hz1/2
Power supply current
Is
Dark state
-
5
15
-
5
15
mA
G ESD
S7516 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body,
surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a countermeasure
against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following
precautions must be observed during use:
To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar
tools to ground the operator's body via a high impedance resistor (1 M
).
A semiconductive sheet (1 M
to 100 M) should be laid on both the work table and the floor in the work area.
When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 M
.
For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a
resistance of 0.1 M
/cm2 to 1 G/cm2.
G Wiring
If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance
or destroy the device. Always check the wiring and dimensional
outline to avoid misconnection.
Precautions for use
1
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