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参数资料
| 型号： | S7516 |
| 元件分类： | 光电元器件 |
| 英文描述： | LINEAR OUTPUT PHOTO DETECTOR |
| 封装： | HERMETIC SEALED, TO-8, 5 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 163K |
| 代理商： | S7516 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
Si PIN photodiode with preamp
S7516 series
Cat. No. KPIN1037E05
Feb. 2003 DN
LENS
9.0
14.0 ± 0.2
7.0
15.6 ± 0.3
1.2 MAX.
(3.3)
0.5
MAX.
4.2
10.16 ± 0.2
10.16
±
0.2
OUT
Vcc-
GND
PD (CATHODE)
Vcc+
0.75
LEAD
5.1
±
0.3
2.54 ± 0.2
PHOTOSENSITIVE
SURFACE
I NEP characteristics
I Spectral response
FREQUENCY
RELATIVE
OUTPUT
(dB)
5
0
-5
-10
-15
-20
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
(Typ. Ta=25 C, Vcc=±5 V, VR=30 V)
RL=500
RL=50
I Frequency response
10
-11
100 kHz
1 MHz
10 MHz
FREQUENCY
100 MHz
1 GHz
10
-10
10
-9
10
-8
(Typ. Ta=25 C, Vcc=±5 V, VR=30 V)
RL=500
RL=50
NEP
(Wr
ms/Hz
)
1
2
I Dimensional outlines (unit: mm)
KPINA0057EA
I Equivalent circuit
0
100 kHz
1 MHz
10 MHz
FREQUENCY
100 MHz
1 GHz
10
20
OUTPUT
NOISE
VOLTAGE
(nV/Hz
1/2
)
30
(Typ. Ta=25 C, Vcc=±5 V, VR=30 V)
RL=500
RL=50
I Output noise voltage
characteristics
KPINB0120EC
KPINB0202EA
I Output noise integration
characteristics
KPINC0013EA
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(V/W)
300
0
40
60
100
140
120
80
20
160
180
500
700
900
1100
(Typ. Ta=25 C, Vcc=±5 V, VR=30 V)
S7516
(RL=50
)
S7516 (RL=500
)
S7516-01 (RL=500
)
S7516-01
(RL=50
)
FREQUENCY
OUTPUT
NOISE
INTEGRATION
(
Vrms)
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
(Typ. Ta=25 C, Vcc=±5 V, VR=30 V)
0
50
100
150
250
300
200
RL=500
RL=50
Vcc+
PACKAGE
0.1
F
Vcc-
GND
PD (K)
0.1
F
0.1
F
68
470
51
OUT
39
-
+
WINDOW
10.0 ± 0.1
14.0 ± 0.2
5.1
±
0.3
15.6 ± 0.3
1.2 MAX.
(3.3)
0.5
MAX.
4.2
10.16 ± 0.2
10.16
±
0.2
OUT
Vcc-
GND
PD (CATHODE)
Vcc+
The glass window may extend
a maximum of 0.3 mm beyond
the upper surface of the cap.
0.75
LEAD
2.54 ± 0.2
PHOTOSENSITIVE
SURFACE
KPINA0064EA
KPINB0201EB
KPINB0127EB
KPINB0119EC
S7516
S7516-01
I Sensitivity uniformity
60
40
20
-6
-4
-2
0
2
4
6
RELATIVE
SENSITIVITY
(%)
POSITION ON ACTIVE AREA (mm)
(Typ. Ta=25 C, spot light size= 500 m)
0
120
100
80
S7516
S7516-01
KPINB0237EA
2
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