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| 型号： | S8594 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 文件页数： | 2/2页 |
| 文件大小： | 129K |
| 代理商： | S8594 |
Si PIN photodiode
S8594
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KMPD1054E01
Jan. 2002 DN
I Spectral response
0
0.2
0.4
0.6
0.1
0.3
0.5
0.7
0.8
(Typ. Ta=25 C)
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
I Photo sensitivity temperature
characteristic
0
190
400
600
800
1000
+1.0
+0.5
(Typ. )
+1.5
-0.5
WAVELENGTH (nm)
TEMPERATURE
COEFFICIENT
(%/
C)
I Dark current vs. reverse voltage
REVERSE VOLTAGE (V)
DARK
CURRENT
100 pA
10 nA
1 nA
10 pA
1 pA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
I Terminal capacitance vs.
reverse voltage
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
1 nF
10 pF
1 pF
100 fF
0.1
110
100
100 pF
I Photo sensitivity uniformity
0
POSITION ON PHOTOSENSITIVE SURFACE (mm)
[Slit (light-shielded black mask): L/S=10 m,
λ=830 nm, spot light size (1/e
2): φ7 m]
OUTPUT
0.5
1
1.5
2
(,
)
8.8 ± 0.2
(4 ×) R0.3
10.6
±
0.2
1.5
1.27
1.5
2.5
0.46
1.26
±
0.15
0.03
5.0
a
b
d
c
(10 ×) 0.6
Package burr may extend to the outside
a maximum of 0.3 mm.
PHOTOSENSITIVE
SURFACE
DETAILS OF
ACTIVE AREA
ANODE b
NC
CATHODE COMMON
NC
ANODE c
ANODE d
NC
ANODE a
0.14
0.015
ANODE
ELECTRODE
SLIT
L/S=0.01/0.01
0.05
0.01
SLIT
L/S=0.01/0.01
0.01
KMPDB0185EA
KMPDB0186EA
I Dimensional outline (unit: mm)
KMPDB0189EA
KMPDB0123EA
KMPDB0184EA
KMPDA0138EA
2
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相关代理商/技术参数 |
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|---|---|
| S85B | 功能描述:整流器 100V 85A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S85BR | 功能描述:整流器 100V 85A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S85D | 功能描述:整流器 200V 85A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S85DR | 功能描述:整流器 200V 85A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S85G | 功能描述:整流器 400V 85A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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