参数资料
型号: S9011LT1-SOT-23
厂商: 江苏长电科技股份有限公司
英文描述: TRANSISTOR( NPN )
中文描述: 晶体管(NPN)的
文件页数: 1/2页
文件大小: 118K
代理商: S9011LT1-SOT-23
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9011LT1
TRANSISTOR
FEATURES
Power dissipation
P
CM
: 0.2 W
Collector current
I
CM
: 0.03 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
NPN
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A
I
E
=0
30
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 0.1mA
I
B
=0
20
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
A
I
C
=0
4
V
Collector cut-off current
I
CBO
V
CB
=16 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=16V , I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3.5V , I
C
=0
0.1
A
DC current gain
h
FE(1)
V
CE
=5V, I
C
= 1mA
70
200
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=10 mA, I
B
= 1mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=10 mA, I
B
= 1mA
1
V
Transition frequency
f
T
V
CE
=5V, I
C
= 1mA
f=
30MHz
150
MHz
DEVICE MARKING:
S9011LT1= 1T
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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