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参数资料
| 型号： | S9251-15 |
| 元件分类： | 光敏二极管 |
| 英文描述： | AVALANCHE PHOTO DIODE |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 74K |
| 代理商： | S9251-15 |
S9251 series
Features
Applications
PHOTODIODE
Si APD
l High sensitivity in near IR range (λ=900 nm)
l Operational stability
l Rangefinder
l Spatial light transmission
High sensitivity in near IR range (
λ=900 nm)
1
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Effective *
2
active area size
Effective
active area
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
1
Package
(mm)
(mm
2)
(°C)
S9251-02
φ0.2
0.03
S9251-05
/K
TO-18
φ0.5
0.19
S9251-10
φ1.0
0.78
S9251-15
/K
TO-5
φ1.5
1.77
-20 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Break do w n
voltage
VBR
ID=100 A
Dark *
3
current
ID
Spectral
response
range
λ
Peak *3
sensitivity
w avelength
λp
Photo
sensitivity
S
M=1
λ=900 nm
Quantum
efficiency
QE
M=1
λ=900 nm
Te m p
c oefficient
of V BR
Cut-off *3
freque ncy
fc
RL=50
Terminal *3
capacitance
Ct
Excess *
3
noise
figure
x
λ=900 nm
Gain
M
λ=900 nm
Type No.
(nm)
(A/W)
(%)
Typ.
(V)
Max.
(V)
(V/°C)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
S9251-02
0.1
1
0.4
S9251-05
0.2
2
400
0.7
S9251-10
0.4
4
380
1.9
S9251-15
440 to
1100
860
0.52
72
250 350
1.85
0.8
8
350
3.6
0.3
100
*1: K: borosilicate glass
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
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