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参数资料
| 型号： | SA170C |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
| 封装： | AXIAL PACKAGE-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 29K |
| 代理商： | SA170C |
Part:
SA170C
Series:
500W Axial Leaded TVS Diode - SA Series
Technology:Silicon Avalanche Diode (SADs)
PARAMETERS
Package Type
Pkg Type
Axial Leaded
Mount Method
Mount
Through Hole
Maximum Reverse Leakage Current
I
R
3.00
Maximum Temperature
Max Temp (°C )
175.00
Standoff Polarity
Polarity
Bipolar
Tolerance
10
Breakover Voltage
V
BO MIN (V)
0.00
Maximum Breakover Voltage
V
BO MAX (V)
0.00
On-state forward Voltage
V
F (V)
0.00
Minimum Foldback Voltage
V
FB
0.00
Reverse Standoff Voltage
V
SO
170.00
Device Wattage
Watts
500
AC Working Voltage
VAC
133
Reverse Stand-off Voltage
V
R (V)
170.00
Breakdown Voltage @ I<sub>T</sub>
V
BR MIN (V)
189.00
Breakdown Voltage @ I<sub>T</sub>
V
BR MAX (V)
231.00
Test Current
I
T (mA)
1.00
Clamping Voltage
V
CL @ I PP (A)
301.00
Peak Pulse Current
I
PP 10x1000(A)
1.90
Peak Pulse Current
I
PP 8x20 (A)
Max Capacitance
C TYP (pF)
0
Working Inverse Blocking Voltage
V
WIB (V)
0.00
Inverse Blocking Leakage Current
I
IB @ V WIB (A) 0.00
Peak Inverse Blocking Voltage
V
PIB (V)
0.00
Peak Pulse Current
I
PP (A)
1.90
Minimum Zener Voltage @ I<sub>Z</sub>
V
Z MIN (V)
0.00
Maximum Zener Voltage @ I<sub>Z</sub>
V
Z MAX (V)
0.00
Zener Current
I
Z (A)
0.00
Zener Resistance
Resistance (Ohms)
0.00
Peak Pulse Power - 10x1000s
P
PP 10x1000s (W) 500
Peak Pulse Power - 8x20s
P
PP 8x20s (W)
0
Peak Pulse Power - 10x160s
P
PP 10x160s (W)
0
Battery/System Voltage 12/14
Volt 12/14
Battery/System Voltage 24/28
Volt 24/28
Battery/System Voltage 36/42
Volt 36/42
Certifications
Cert
PROTECTS AGAINST:
Lightning Transients
AC Mains
Telecom - DC Power
Other Threats
ESD
相关PDF资料 |
PDF描述 |
|---|---|
| SB05-03Q-TL | 0.5 A, 30 V, SILICON, SIGNAL DIODE |
| SB05-05C | 0.5 A, 50 V, SILICON, SIGNAL DIODE |
| SB05-05P | 0.5 A, 50 V, SILICON, SIGNAL DIODE |
| SB120 | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 |
| SB130 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SA170C _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SA170C/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 170V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SA170C/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 170V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SA170C/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 170V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SA170C/TR12 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel |
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