- 您现在的位置：买卖IC网 > PDF目录378684 > SA (乐山无线电股份有限公司) N-CHANNEL POWER MOSFET PDF资料下载
参数资料
| 型号： | SA |
| 厂商： | 乐山无线电股份有限公司 |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | N沟道功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 105K |
| 代理商： | SA |
LBSS123LT1–1/4
LESHAN RADIO COMPANY, LTD.
1
3
SOT
-
23
2
LBSS123LT1
3
1
2
Gate
Source
Drain
N-CHANNEL POWER MOSFET
LBSS123LT1
FEATURE
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS123LT1
SA
3000/Tape&Reel
LBSS123LT1G
SA
(Pb-Free)
3000/Tape&Reel
LBSS123LT3
SA
10000/Tape&Reel
LBSS123LT3G
SA
(Pb-Free)
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
100
Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
μ
s)
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
ID
IDM
0.17
0.68
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to
Ambient
RJA
556
°
C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°
C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width
300 s, Duty Cycle
3. FR–5 = 1.0
0.75
0.062 in.
2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| SB12100 | Schottky Barrier Rectifiers |
| SB1220 | Schottky Barrier Rectifiers |
| SB1230 | Schottky Barrier Rectifiers |
| SB1240 | Schottky Barrier Rectifiers |
| SB1250 | Schottky Barrier Rectifiers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SA 0034.0908 | 制造商:Schurter Electronic Components 功能描述: |
| SA 1.5UD1W1 | 制造商:CHEVAL ELECTRONIC ENCLOSURES 功能描述:EQPT HSG 203 X 177 X 65 |
| SA 1.5UD1W3 | 制造商:CHEVAL ELECTRONIC ENCLOSURES 功能描述:EQPT HSG 432X177X65 |
| SA 106A 0970 0040 | 制造商:Nordic Power i Stromstad 功能描述:Bulk |
| SA 106B 0512 0041 | 制造商:Nordic Power i Stromstad 功能描述:Bulk |
发布紧急采购，3分钟左右您将得到回复。