参数资料
型号: SA
厂商: 乐山无线电股份有限公司
英文描述: N-CHANNEL POWER MOSFET
中文描述: N沟道功率MOSFET
文件页数: 2/4页
文件大小: 105K
代理商: SA
LESHANRADIOCOMPANY,LTD.
LBSS123LT1–2/4
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250
μ
Adc)
V(BR)DSS
100
Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc)
TJ = 25
°
C
TJ = 125
°
C
IDSS
15
60
μ
Adc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
(Note 4.)
IGSS
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
2.8
Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
5.0
6.0
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
gfs
80
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
20
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
9.0
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
Crss
4.0
pF
Turn–On Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50
)
td(on)
td(off)
20
ns
Turn–Off Delay Time
40
ns
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width
VSD
1.3
V
300 s, Duty Cycle
2.0%.
LBSS123LT1
相关PDF资料
PDF描述
SB12100 Schottky Barrier Rectifiers
SB1220 Schottky Barrier Rectifiers
SB1230 Schottky Barrier Rectifiers
SB1240 Schottky Barrier Rectifiers
SB1250 Schottky Barrier Rectifiers
相关代理商/技术参数
参数描述
SA 0034.0908 制造商:Schurter Electronic Components 功能描述:
SA 1.5UD1W1 制造商:CHEVAL ELECTRONIC ENCLOSURES 功能描述:EQPT HSG 203 X 177 X 65
SA 1.5UD1W3 制造商:CHEVAL ELECTRONIC ENCLOSURES 功能描述:EQPT HSG 432X177X65
SA 106A 0970 0040 制造商:Nordic Power i Stromstad 功能描述:Bulk
SA 106B 0512 0041 制造商:Nordic Power i Stromstad 功能描述:Bulk