参数资料
型号: SAB-XC164CM-4F40F
厂商: INFINEON TECHNOLOGIES AG
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP64
封装: PLASTIC, TQFP-64
文件页数: 61/69页
文件大小: 1591K
代理商: SAB-XC164CM-4F40F
XC164CM
Derivatives
Electrical Parameters
Data Sheet
62
V1.2, 2006-03
Different frequency bands can be selected for the VCO, so the operation of the PLL can
be adjusted to a wide range of input and output frequencies:
4.4.2
On-chip Flash Operation
The XC164CM’s Flash module delivers data within a fixed access time (see Table 17).
Accesses to the Flash module are controlled by the PMI and take 1+WS clock cycles,
where WS is the number of Flash access waitstates selected via bitfield WSFLASH in
register IMBCTRL. The resulting duration of the access phase must cover the access
time
t
ACC of the Flash array. The required Flash waitstates depend on the actual system
frequency.
The Flash access waitstates only affect non-sequential accesses. Due to prefetching
mechanisms, the performance for sequential accesses (depending on the software
structure) is only partially influenced by waitstates.
In typical applications, eliminating one waitstate increases the average performance by
5% … 15%.
Example: For an operating frequency of 40 MHz (clock cycle = 25 ns), the Flash
accesses must be executed with 1 waitstate: ((1+1)
× 25 ns) ≥ 50 ns.
indicates the interrelation of waitstates and system frequency.
Table 16
VCO Bands for PLL Operation1)
1) Not subject to production test - verified by design/characterization.
PLLCON.PLLVB
VCO Frequency Range
Base Frequency Range
00
100 … 150 MHz
20 … 80 MHz
01
150 … 200 MHz
40 … 130 MHz
10
200 … 250 MHz
60 … 180 MHz
11
Reserved
Table 17
Flash Characteristics
(Operating Conditions apply)
Parameter
Symbol
Limit Values
Unit
Min.
Typ.
Max.
Flash module access time
t
ACC
CC ––501)
1) The actual access time is influenced by the system frequency, see Table 18.
ns
Programming time per 128-byte block
t
PR
CC –
22)
2) Programming and erase time depends on the system frequency. Typical values are valid for 40 MHz.
5ms
Erase time per sector
t
ER
CC –
500
ms
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