- 您现在的位置：买卖IC网 > PDF目录39887 > SAC18E3 (MICROSEMI CORP-SCOTTSDALE) 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 PDF资料下载
参数资料
| 型号： | SAC18E3 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 211K |
| 代理商： | SAC18E3 |
Microsemi
Scottsdale Division
Page 3
Copyright
2007
6-20-2007 REV E
WWW
.Microse
m
i
.CO
M
SAC5.0 thru SAC50, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
S C O T TS DALE DIVISION
Peak Power
(Single Pulse)
I PP
–
P
eak
Pulse
C
urre
nt
-
%
I PP
%
of
Rate
d
Pow
er
Average
Power
Lead Length = 3/8”
TL – Lead Temperature –
oC
t – Time – msec
FIGURE 2
FIGURE 3
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage VC. The Microsemi recommended rectifier part number is the “LCR60” for the application in Figure 5. If using two
(2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the
reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the
capacitance of Figure 4.
FIGURE 4
FIGURE 5
FIGURE 6
SAC5.0
thru
SAC50,
e3
TVS with internal Low
Optional Unidirectional
Optional Bidirectional
Capacitance Diode
configuration (TVS and
configuration (two TVS
separate rectifier diode)
devices in anti-parallel)
in parallel)
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料 |
PDF描述 |
|---|---|
| SAC22E3 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 |
| MQSMCG10CTR | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| MQSMCG10C | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| MQSMCG10 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| MQSMCG11CTR | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SAC18-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 18V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SAC18-E3/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 18V 10% Low Cap RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SAC18-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 18V 10% Low Cap RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SAC18-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 18V 10% Low Cap RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SAC18-E3/73 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 18V 10% Low Cap RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。