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参数资料
型号： SACB36
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装： ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件页数： 2/4页
文件大小： 175K
代理商： SACB36
20
Transient Voltage Suppression Diodes
Revision: January 09, 2009
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Surface Mount – 500W > SACB series
SACB Series
Please refer to http://www.Littelfuse.com/series/SACB.html for current information.
Electrical Characteristics
Part
Number
Marking
Code
Stand-Off
Voltage
(Note1) V
R
(V)
Minimum
Breakdown
Voltage at
I
T =1.0MA
V
BR(V)
Maximum
Reverse
Leakage
at V
R IR
(μA)
Maximum
Clamping
Voltage at
I
PP=5.0A
V
C(V)
Maximum
Peak
Pulse
Current
per (Fig.3)
I
PP(A)
Maximum
Junction
Capacitance
at
0 Volts (pF)
Working
Inverse
Blocking
Voltage
V
WIB(V)
Inverse
Blocking
Leakage
Current at
V
WIB@ IIB
(mA)
Peak Inverse
Blocking
Voltage V
PIB
(V)
UL
Recognition
SACB5.0
SKE
5.0
7.60
300
10.0
44.0
45
75
1.0
100
X
SACB6.0
SKG
6.0
7.90
300
11.2
41.0
45
75
1.0
100
X
SACB7.0
SKM
7.0
8.33
300
12.6
38.0
45
75
1.0
100
X
SACB8.0
SKR
8.0
8.89
100
13.4
36.0
45
75
1.0
100
X
SACB8.5
SKT
8.5
9.44
50
14.0
34.0
45
75
1.0
100
X
SACB10
SKX
10.0
11.10
5
16.3
29.0
45
75
1.0
100
X
SACB12
SLE
12.0
13.30
5
19.0
25.0
45
75
1.0
100
X
SACB15
SLM
15.0
16.70
5
23.6
20.0
45
75
1.0
100
X
SACB18
SLT
18.0
20.00
5
28.8
15.0
45
75
1.0
100
X
SACB22
SLX
22.0
24.40
5
35.4
14.0
45
75
1.0
100
X
SACB26
SME
26.0
28.90
5
42.3
11.1
45
75
1.0
100
X
SACB30
SMK
30.0
33.30
5
48.6
10.0
45
75
1.0
100
X
SACB36
SMP
36.0
40.00
5
60.0
8.6
45
75
1.0
100
X
SACB45
SMV
45.0
50.00
5
77.0
6.8
45
150
1.0
200
X
SACB50
SMZ
50.0
55.50
5
88.0
5.8
45
150
1.0
200
X
Ratings and Characteristic Curves (T
A=25°C unless otherwise noted
Low Capacitance
Application Note: Device must be used with two
units in parallel, opposite in polarity as shown in
circuit for AC signal line protection.
Figure 4 - AC Line Protection Application
0.1
1
10
100
0.1s
1.0s
10s
100s
1.0ms
10ms
I PPM
-Peak
Pulse
Power
(kW)
td - Pulse Width (sec.)
Non-repetitive Pulse
Waveform shown in Fig. 3
TA =25°C
30
Current Waveforms
Square
PPK
td=7tp
td
PPK
Half Sine
Impulse
td
PPK".5"
Exponential
Decay
Ratings and Characteristic Curves (T
A= 25°C unless otherwise noted)
I PPM
-P
eak
P
ulse
Cur
rent,
%
I
RSM
0
50
100
150
1.0
2.0
3.0
4.0
tr=10μsec
Peak Value
IPPM
2
TJ=25°C
Pulse Width(td) is dened
as the point where the peak
current decays to 50% of IPPM
10/1000μsec. Waveform
as dened by R.E.A
td
t-Time (ms)
Half Value
IPPM
( )
0
25
50
75
100
0255075
100
125
150
Percentage
of
Rated
Power
(%)
Average Power
Peak Power
(Single Pulse)
T
L - Lead Temperature (C)
Figure 1 - Peak Pulse Power Rating Curve
Figure 2 - Pulse Derating Curve
Figure 3 - Pulse Waveform
相关PDF资料
PDF描述
SACB45 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SAM50FASMSTX 0.5 A, SILICON, SIGNAL DIODE
SAM50FATX 0.5 A, SILICON, SIGNAL DIODE
SB02-03C 0.2 A, 30 V, SILICON, SIGNAL DIODE
SB02-03C 0.2 A, 30 V, SILICON, SIGNAL DIODE
相关代理商/技术参数
参数描述
SACB45 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS 500W 45V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SACB5.0 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS 500W 5V DO-214AA TR13 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SACB50 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS 500W 50V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SACB6.0 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS 500W 6V DO-214AA TR13 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SACB7.0 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS 500W 7V DO-214AA TR13 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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