参数资料
型号: SAF-C161O-LM 3V HA
厂商: Infineon Technologies
文件页数: 40/66页
文件大小: 0K
描述: IC MCU 16BIT ROM/LESS MQFP-80-1
标准包装: 1
系列: C16xx
核心处理器: C166
芯体尺寸: 16-位
速度: 20MHz
连通性: EBI/EMI,SPI,UART/USART
外围设备: POR,PWM,WDT
输入/输出数: 63
程序存储器类型: ROMless
RAM 容量: 2K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
振荡器型: 外部
工作温度: -40°C ~ 85°C
封装/外壳: 80-QFP
包装: 剪切带 (CT)
产品目录页面: 736 (CN2011-ZH PDF)
其它名称: SAF-C161O-LM3VHACT
SAF-C161O-LM3VHACT-ND
SAF-C161O-LM3VHAINCT
C161K
C161O
Data Sheet
41
V2.0, 2001-01
Memory Cycle Variables
The timing tables below use three variables which are derived from the BUSCONx
registers and represent the special characteristics of the programmed memory cycle.
The following table describes, how these variables are to be computed.
Note: Please respect the maximum operating frequency of the respective derivative.
AC Characteristics
Table 12
Memory Cycle Variables
Description
Symbol
Values
ALE Extension
tA
TCL
× <ALECTL>
Memory Cycle Time Waitstates
tC
2TCL
× (15 - <MCTC>)
Memory Tristate Time
tF
2TCL
× (1 - <MTTC>)
Multiplexed Bus (Standard Supply Voltage Range)
(Operating Conditions apply)
ALE cycle time = 6 TCL + 2
tA + tC + tF (120 ns at 25 MHz CPU clock without waitstates)
Parameter
Symbol
Max. CPU Clock
= 25 MHz
Variable CPU Clock
1 / 2TCL = 1 to 25 MHz
Unit
min.
max.
min.
max.
ALE high time
t5
CC
10 +
tA
TCL - 10
+
tA
ns
Address setup to ALE
t6
CC
4 +
tA
TCL - 16
+
tA
ns
Address hold after ALE
t7
CC
10 +
tA
TCL - 10
+
tA
ns
ALE falling edge to RD,
WR (with RW-delay)
t8
CC
10 +
tA
TCL - 10
+
tA
ns
ALE falling edge to RD,
WR (no RW-delay)
t9
CC
-10 +
tA
-10 +
tA
ns
Address float after RD,
WR (with RW-delay)
t10 CC –
6
6ns
Address float after RD,
WR (no RW-delay)
t11 CC –
26
TCL + 6
ns
RD, WR low time
(with RW-delay)
t12 CC 30 + tC
2TCL - 10
+
tC
ns
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