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参数资料
| 型号： | SB060-E3/73 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.6 A, 60 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, CASE MPG06, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 65K |
| 代理商： | SB060-E3/73 |
Document Number: 88714
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 16-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Miniature Schottky Barrier Rectifier
SB020 thru SB060
Vishay General Semiconductor
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
MPG06
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV)
0.6 A
VRRM
20 V to 60 V
IFSM
20 A
VF
0.55 V, 0.70 V
TJ max.
125 °C, 150 °C
MPG06
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB020
SB030
SB040
SB050
SB060
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
0.6
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
20
A
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB020
SB030
SB040
SB050
SB060
UNIT
Maximum instantaneous
forward voltage
0.6 A
VF (1)
0.55
0.70
V
Maximum instantaneous
reverse current at rated DC
blocking voltage
TA = 25 °C
IR (1)
0.5
mA
TA = 100 °C
10
5.0
相关PDF资料 |
PDF描述 |
|---|---|
| SB050-E3/54 | 0.6 A, 50 V, SILICON, SIGNAL DIODE |
| SB020-E3/54 | 0.6 A, 20 V, SILICON, SIGNAL DIODE |
| SB10-04A3 | 1 A, 40 V, SILICON, SIGNAL DIODE |
| SB10-05P | 1 A, 50 V, SILICON, SIGNAL DIODE |
| SB10-09F | 1 A, 90 V, SILICON, SIGNAL DIODE, TO-126 |
相关代理商/技术参数 |
参数描述 |
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