参数资料
型号: SB060-E3/73
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.6 A, 60 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, MINIATURE, PLASTIC, CASE MPG06, 2 PIN
文件页数: 2/4页
文件大小: 65K
代理商: SB060-E3/73
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88714
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 16-Oct-09
SB020 thru SB060
Vishay General Semiconductor
Note
(1) Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB020
SB030
SB040
SB050
SB060
UNIT
Typical thermal resistance
RθJA
(1)
80
°C/W
RθJL
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (G)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SB040-E3/54
0.203
54
5500
13" diameter paper tape and reel
SB040-E3/73
0.203
73
3000
Ammo pack packaging
0
0.6
0.8
80
60
40
20
100
120
140
Average
Forward
Current
(A)
Lead Temperature (°C)
0.4
0.2
160
SB050 and SB060
SB020 thru SB040
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
10
15
1
100
10
Peak
Forward
S
urge
Current
(A)
Number of Cycles at 60 Hz
20
25
5
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.2
0
0.4
0.6
0.8
1.2
0.01
0.1
10
1
In
s
tantaneou
s
Forward
Current
(A)
Instantaneous Forward Voltage (V)
1.0
T
J = 125 °C
T
J = 25 °C
T
J = 100 °C
SB020 thru SB040
SB050 and SB060
60
40
20
0
100
80
Percent of Rated Peak Reverse Voltage (%)
0.01
0.001
0.1
10
1
SB020 thru SB040
SB050 and SB060
In
s
tantaneou
s
Rever
s
e
Leakage
Curr
ent
(mA)
T
J = 125 °C
T
J = 25 °C
T
J = 100 °C
相关PDF资料
PDF描述
SB050-E3/54 0.6 A, 50 V, SILICON, SIGNAL DIODE
SB020-E3/54 0.6 A, 20 V, SILICON, SIGNAL DIODE
SB10-04A3 1 A, 40 V, SILICON, SIGNAL DIODE
SB10-05P 1 A, 50 V, SILICON, SIGNAL DIODE
SB10-09F 1 A, 90 V, SILICON, SIGNAL DIODE, TO-126
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