参数资料
型号: SB1003M3
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 30 V, SILICON, SIGNAL DIODE
封装: ULTRA SMALL, MCPH3, 3 PIN
文件页数: 1/3页
文件大小: 247K
代理商: SB1003M3
SB1003M3
No.8375-1/3
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Low switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.85mm).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
35
V
Average Output Current
IO
1.0
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=0.5mA
30
V
Forward Voltage
VF1IF=0.7A
0.45
0.50
V
VF2IF=1.0A
0.48
0.53
V
Reverse Current
IR
VR=16V
15
A
Interterminal Capacitance
C
VR=10V, f=1MHz
27
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Rth(j-a)1
Mounted in Cu-foiled area of 0.72mm2!0.03mm
94.7
°C / W
Thermal Resistance
on glass epoxy board
Rth(j-a)2
Mounted on a ceramic board (500mm2!0.8mm)
67.7
°C / W
Marking : SK
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8375
63005SB MS IM TB-00001533
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SB1003M3
Schottky Barrier Diode
30V, 1.0A Rectifier
http://semicon.sanyo.com/en/network
相关PDF资料
PDF描述
SB101 10 A, SILICON, BRIDGE RECTIFIER DIODE
SB103 10 A, SILICON, BRIDGE RECTIFIER DIODE
SB120 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
SB130 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41
SB12100-BP 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
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