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参数资料
| 型号： | SB130 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 149K |
| 代理商： | SB130 |
SB120 – SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Data Sheet 3061, Rev. —
SENSITRON
SEMICONDUCTOR
10
20
30
40
0
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half Sine-Wave
(JEDEC Method)
T = 150 C
j
°
10
100
1000
0.1
1
10
100
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
SB150 - SB160
SB120 - SB140
T = 25 C
f = 1.0MHz
j
°
0
20
40
60
80
100
120
140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 100 C
j
°
T = 75 C
j
°
T = 25 C
j
°
100
10
1.0
0.1
0.01
0.001
0.1
1.0
10
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
20
0.5
0.1
0.9
1.3
1.7
2.1
T = 25 C
j
°
I Pulse Width = 300 s
F
SB150 - SB160
SB120 - SB140
0
0.5
1.0
25
50
75
100
125
150
I
A
VERAGE
FOR
W
ARD
CURRENT
(A)
(O),
T , LEAD TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L
°
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相关PDF资料 |
PDF描述 |
|---|---|
| SB150 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
| SB120-G | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 |
| SB140-B | 1 A, SILICON, SIGNAL DIODE |
| MBR1050 | 10 A, SILICON, RECTIFIER DIODE |
| MBR1090 | 10 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB130 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB130 | 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 1A 30V |
| SB130/1 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 1A 2-Pin DO-204AL Bulk |
| SB130_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| SB1305100ML | 制造商:ABC 制造商全称:ABC Taiwan Electronics Corp 功能描述:SMD POWER INDUCTOR |
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