参数资料
型号: SB150A-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
封装: LEAD FREE, PLASTIC, DO-41, 2 PIN
文件页数: 2/4页
文件大小: 330K
代理商: SB150A-E3
www.vishay.com
2
Document Number 88862
14-Jul-05
SB120A thru SB160A
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5 mm) lead length
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter
Test condition
Symbol
SB120A
SB130A
SB140A
SB150A
SB160A
Unit
Maximum instantaneous
forward voltage
at 1.0 A (1)
VF
0.5
0.7
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TA = 25 °C
TA = 100 °C
IR
0.5
mA
10
5.0
Parameter
Symbol
SB120A
SB130A
SB140A
SB150A
SB160A
Unit
Typical thermal resistance (1)
RθJA
RθJL
100
30
°C/W
Figure 1. Forward Current Derating Curve
0
0.25
0.5
0.75
0
50
75
25
100
125
150
175
1.0
A
v
erage
F
or
w
ard
C
u
rrent
(A)
Lead Temperature ( °C)
Resistiveor
Inductive Load
0.375" (9.5 mm)
Lead Length
SB120A — SB140A
SB150A
& SB160A
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
Number of Cycles at 60 HZ
0
10
30
20
50
40
110
100
TJ =TJ max.
8.3ms Single Half Sine-Wave
相关PDF资料
PDF描述
SB120E 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
SB130E 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41
SB150E 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
SB12100 12 A, 100 V, SILICON, RECTIFIER DIODE
SB1240 12 A, 40 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
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