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参数资料
| 型号： | SB160-E3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 65K |
| 代理商： | SB160-E3/54 |
Document Number: 88715
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 16-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB120 thru SB160
Vishay General Semiconductor
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V to 60 V
IFSM
50 A
VF
0.48 V, 0.65 V
TJ max.
125 °C, 150 °C
DO-204AL (DO-41)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB120
SB130
SB140
SB150
SB160
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB120
SB130
SB140
SB150
SB160
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF (1)
0.48
0.65
V
Maximum instantaneous reverse
current at rated DC blocking voltage
TA = 25 °C
IR (1)
0.50
mA
TA = 100 °C
10
5.0
相关PDF资料 |
PDF描述 |
|---|---|
| SB150-E3/73 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB130A-E3/73 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB160A-E3/54 | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB140A-E3/73 | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB130S | 1 A, 30 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB160E-G | 功能描述:肖特基二极管与整流器 Low VF ESD 1A 60V Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB160H | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| SB160L-Z41-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:1.0A SCHOTTKY BARRIER RECTIFIER |
| SB160M-40 | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:Silicon Epitaxial Planer Schottky Barrier Diode |
| SB160S | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
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