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参数资料
| 型号： | SB160A-E3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 74K |
| 代理商： | SB160A-E3/54 |
Document Number: 88862
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB120A thru SB160A
Vishay General Semiconductor
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V to 60 V
IFSM
35 A
VF
0.50 V, 0.70 V
TJ max.
125 °C, 150 °C
DO-204AL (DO-41)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB120A
SB130A
SB140A
SB150A
SB160A
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
35
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB120A
SB130A
SB140A
SB150A
SB160A
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF (1)
0.5
0.7
V
Maximum reverse current
at rated VR
TA = 25 °C
IR (2)
0.5
mA
TA = 100 °C
10
5.0
相关PDF资料 |
PDF描述 |
|---|---|
| SB140A-E3/73 | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB130S | 1 A, 30 V, SILICON, SIGNAL DIODE |
| SB180S | 1 A, 80 V, SILICON, SIGNAL DIODE |
| SB130TR | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| SB140TR | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB160A-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Leaded Schottky Barrier Rectifiers |
| SB160-B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SCHOTTKY BARRIER RECTIFIER |
| SB160B-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Leaded Schottky Barrier Rectifiers |
| SB160E | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 60V CURRENT: 1.0A |
| SB160-E | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A |
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