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参数资料
| 型号： | SB160A-E3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 74K |
| 代理商： | SB160A-E3/54 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88862
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 14-Jan-11
SB120A thru SB160A
Vishay General Semiconductor
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
Note
(1) Thermal resistance from junction to lead P.C.B. mounting 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB120A
SB130A
SB140A
SB150A
SB160A
UNIT
Typical thermal resistance
RJA (1)
100
°C/W
RJL (1)
30
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SB140A-E3/54
0.34
54
5500
13" diameter paper tape and reel
SB140A-E3/73
0.34
73
3000
Ammo pack packaging
0
0.25
0.5
0.75
0
50
75
25
100
125
150
175
1.0
Average
Forward
Current
(A)
Lead Temperature (°C)
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
SB120A thru SB140A
SB150A and SB160A
0
10
30
20
50
40
10
1
100
Number of Cycles at 60 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
In
s
tantaneou
s
Forward
Current
(A)
100
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
0.4
0.2
0
1.2
0.8
0.6
1.4
1.6
1.0
SB120A thru SB140A
SB150A and SB160A
T
J = 125 °C
T
J = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
T
J = 150 °C
In
s
tantaneou
s
Rever
s
e
Current
(mA)
1
10
100
0.01
0.001
0.1
20
0
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
SB120A thru SB140A
SB150A and SB160A
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
相关PDF资料 |
PDF描述 |
|---|---|
| SB140A-E3/73 | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL |
| SB130S | 1 A, 30 V, SILICON, SIGNAL DIODE |
| SB180S | 1 A, 80 V, SILICON, SIGNAL DIODE |
| SB130TR | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| SB140TR | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB160A-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Leaded Schottky Barrier Rectifiers |
| SB160-B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SCHOTTKY BARRIER RECTIFIER |
| SB160B-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Leaded Schottky Barrier Rectifiers |
| SB160E | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 60V CURRENT: 1.0A |
| SB160-E | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A |
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