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| 型号： | SB320E-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/3页 |
| 文件大小： | 54K |
| 描述： | DIODE SCHOTTKY 3A 20V DO-201A |
| 标准包装： | 1,200 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 20V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 20V |
| 电容@ Vr, F： | 250pF @ 4V，1MHz |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 带卷 (TR) |
     ESD Leaded Schottky Barrier Rectifiers QW-BB042 Page 1 REV:A Electrical Characteristics (at TA=25°C unless otherwise noted) Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol 320E-G 340E-G 345E-G 350E-G 360E-G 380E-G Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.5” (12.7mm) lead length at TA=75°C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) T L=110°C Maximum forward voltage at 3.0A (Note 1) Maximum DC reverse current TA= 25°C At rated DC blocking voltage TA=100°C Typical junction capacitance (Note 2) Operating junction temperature range VRRM VRMS VDC I(AV) IFSM VF IR CJ TJ -65 to +150 V V V A A V pF °C/W mA NOTES: 1. Pulse test : 300μS pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts . V oltage: 20 to 100 V Current: 3.0 A RoHS Device SB320E-G Thru. SB3100E-G Dimensions in inches and (millimeter) DO-201AD Storage temperature range Comchip Technology CO., LTD. 3 . Thermal resistance f rom j unction t o a mbient and f rom j unction t o l ead P .C.B. mounted 0 .500” ( 12.7mm) lead l ength w ith 2 .5x2.5” ( 63.5x63.5mm) c opper pad. 1.0(25.4) Min. 1.0(25.4) Min. 0.375(9.5) 0.287(7.3) 0.210(5.3) 0.189(4.8) 0.052(1.3) 0.048(1.2) TSTG °C °C Typical thermal resistance (Note 3) RθJA RθJL 20 20 40 40 45 45 50 50 60 60 80 80 100 100 14 28 30 35 42 56 70 3.0 -65 to +150 -65 to +125 20 30 40.0 20.0 0.5 0.50 0.85 0.70 250 80 G Unit SB SB SB SB SB 310 S 0 B E- SB Features Mechanical data - Low drop down voltage. - 3.0A operation at TA=75°C with no thermal runaway . - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - Lead-free part, meet RoHS requirements. - Epoxy: UL94-V0 rated flame retardant - Case: Molded plastic body DO-201AD - Terminals: Solderable per MIL-STD-750 Method 2026 - Polarity: Color band denotes cathode end - Mounting Position: Any - Weight: 1.12 grams - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Comchip S M D D i o d e S p e c i a l i s t |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SB320ET-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:ESD Leaded Schottky Barrier Rectifiers |
| SB320G | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Single Phase 3.0 AMPS. Glass Passivated Bridge Rectifiers |
| SB320-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Leaded Schottky Barrier Rectifiers |
| SB320H | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| SB320S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
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