- 您现在的位置：买卖IC网 > PDF目录40076 > SB3H100HE3/54 (VISHAY SEMICONDUCTORS) 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD PDF资料下载
参数资料
| 型号： | SB3H100HE3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 66K |
| 代理商： | SB3H100HE3/54 |
Document Number: 88720
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 04-Aug-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
SB3H90, SB3H100
Vishay General Semiconductor
New Product
FEATURES
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Low leakage current
High forward surge capabilitmy
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
90 V, 100 V
IFSM
100 A
VF
0.65 V
IR
20 μA
TJ max.
175 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB3H90
SB3H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TL = 90 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dV/dt
10 000
V/μs
Storage temperature range
TSTG
- 55 to + 175
°C
Maximum operating junction temperature
TJ
175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SB3H100E3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90HE3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90-E3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-E3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90-HE3/54 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB3H90 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Voltage Schottky Rectifier |
| SB3H90_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance |
| SB3H90_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Schottky Rectifier |
| SB3H90-E3/51 | 功能描述:肖特基二极管与整流器 90 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB3H90-E3/54 | 功能描述:肖特基二极管与整流器 3.0 Amp 90 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。