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参数资料
| 型号： | SB3H90-HE3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 78K |
| 代理商： | SB3H90-HE3/54 |
Vishay General Semiconductor
SB3H90 & SB3H100
New Product
Document Number 88720
18-May-06
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
middle
voltage
high
frequency
inverters, freewheeling, dc-to-dc converters, and
polarity protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-201AD
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
3.0 A
VRRM
90 V, 100 V
IFSM
100 A
VF
0.65 V
IR
20 A
Tj max.
175 °C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB3H90
SB3H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TL = 90 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dv/dt
10000
V/s
Storage temperature range
TSTG
- 55 to + 175
°C
Maximum operating junction temperature
TJ
175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB3H90
SB3H100
UNIT
Maximum instantaneous forward
voltage at: (1)
IF = 3.0 A,
TJ = 25 °C
TJ = 125 °C
VF
0.80
0.65
V
Maximum DC reverse current at
rated DC blocking voltage
TJ = 25 °C
TJ = 125 °C
IR
20
4.0
A
mA
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| SB3H100-HE3/73 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-E3/51 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90-HE3/73 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
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