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| 型号： | SBAS40LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 88K |
| 描述： | DIODE SCHOTTKY 40V SOT23 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 120mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 40mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 1µA @ 25V |
| 电容@ Vr, F： | 5pF @ 1V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
             ? Semiconductor Components Industries, LLC, 2012 November, 2012 ? Rev. 10 1 Publication Order Number: BAS40LT1/D BAS40L, SBAS40L Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Power Dissipation @ TA = 25 °C Derate above 25°C PF 225 1.8 mW mW/°C Operating Junction and Storage Temperature Range TJ, Tstg ?55 to +150 °C Forward Continuous Current IF 120 mA Forward Surge Current t 1 s t 10 ms IFSM 200 600 mA Thermal Resistance (Note 1) Junction?to?Ambient (Note 2) RJA 508 311 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR?4 @ minimum pad. 2. FR?4 @ 1.0 x 1.0 in pad. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com Device Package Shipping? ORDERING INFORMATION SOT?23 (TO?236) CASE 318 STYLE 8 40 VOLTS SCHOTTKY BARRIER DIODES MARKING DIAGRAM 3 CATHODE 1 ANODE B1 M ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BAS40LT1G, SBAS40LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel B1 = Specific Device Code M = Date Code* = Pb?Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. BAS40LT3G, SBAS40LT3G SOT?23 (Pb?Free) 10,000 / Tape & Reel |
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
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| SBAT001 | 功能描述:DATA BOOK LINEAR & MIXED SIGNAL RoHS:否 类别:集成电路 (IC) >> 配件 系列:- 标准包装:1 系列:- 样式:手册 类型:信号分析 标题:Understanding Signals 所含物品:生成、查看和测量波形的指南 其它名称:70009PAR |
| SBAT54ALT1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SBAT54ALT1G | 功能描述:肖特基二极管与整流器 SS SHKY DIO 30V TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBAT54ALT3G | 功能描述:肖特基二极管与整流器 SS DUAL DIO SPCL TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBAT54AWT1G | 功能描述:肖特基二极管与整流器 SS SC-70 SHKY DIO 30V TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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