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参数资料
| 型号： | SBAV199LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.215 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封装： | CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 51K |
| 代理商： | SBAV199LT1 |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 5
1
Publication Order Number:
BAV199LT1/D
BAV199LT1
Preferred Device
Dual Series Switching
Diode
Features
Low Leakage Current Applications
Medium Speed Switching Times
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
Vdc
Average Rectified Forward Current
(Note 1)
(Averaged Over Any 20 ms Period)
IF(AV)
715
mAdc
Repetitive Peak Forward Current
IFRM
450
mAdc
NonRepetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
CASE 318
SOT23
STYLE 11
BAV199LT1
SOT23
3000/Tape & Reel
MARKING DIAGRAM
JY M
G
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
3
CATHODE/ANODE
ANODE
1
CATHODE
2
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV199LT1G
SOT23
(PbFree)
3000/Tape & Reel
JY = Specific Device Code
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SBAV199LT1G | 功能描述:二极管 - 通用，功率，开关 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAV199LT3G | 功能描述:二极管 - 通用，功率，开关 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAV3482APZ-TR | 制造商:Texas Instruments 功能描述: |
| SBAV55BBPGEQR | 制造商:Texas Instruments 功能描述: |
| SBAV70LT1G | 功能描述:DIODE SWITCH DUAL CC 70V SOT-23 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
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