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参数资料
| 型号： | SBAV99LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.715 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 51K |
| 代理商： | SBAV99LT1 |
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 4
1
Publication Order Number:
BAV99LT1/D
BAV99LT1
Dual Series
Switching Diode
Features
PbFree Packages are Available
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
NonRepetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
65 to
+150
°C
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
CASE 318
SOT23
STYLE 11
BAV99LT1
SOT23
3000/Tape & Reel
MARKING DIAGRAM
A7
= Specific Device Code
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
1
2
3
CATHODE/ANODE
ANODE
1
CATHODE
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99LT3G
SOT23
(PbFree)
10,000/Tape & Reel
BAV99LT1G
SOT23
(PbFree)
3000/Tape & Reel
BAV99LT3
SOT23
10,000/Tape & Reel
http://onsemi.com
1
A7 M
G
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相关代理商/技术参数 |
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| SBAV99LT1G | 功能描述:二极管 - 通用，功率，开关 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAV99LT3G | 功能描述:二极管 - 通用，功率，开关 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAV99RWT1G | 功能描述:二极管 - 通用，功率，开关 SS SWCH DIO 70V TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAV99WT1 | 制造商:ON Semiconductor 功能描述: |
| SBAV99WT1G | 功能描述:二极管 - 通用，功率，开关 SS DUAL DIODE TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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